Exploring the Influence of Channel Doping Concentration on Short Channel Effects in Nanoscale Double-Gate FinFETs: A Comparative Study

Abstract

This work investigates the impact of channel doping concentration on short channel effects (SCEs) in different semiconductor materials using FinFETs. The work examines Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN), and Silicon (Si) FinFETs in the PADRE simulator environment which is a powerful component from Multigate Field Effect Transistor (MUGFET) tool readily available at nanoHUB.org, analyzing performance metrics such as Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), Threshold Voltage roll-off, transconductance as well as on-current. It is found that GaAs-FinFET exhibits lowest DIBL of 3.63 mV/V at low channel doping concentration, lowest SS of 64.37 mV/V at high channel doping concentration, and highest on-current of 2x 10^-4A/μm   at low doping concentration, whereas GaN-FinFET exhibits highest transconductance of  1x 10 ^ -8 S/μm at low channel doping concentration. However, GaSb FinFET displays lowest threshold voltage of 0.48 V at low doping concentration. The work concludes that low channel doping concentration plays a pivotal role in mitigating short channel effects leading to enhanced operational performance of FinFET devices. This finding provides valuable insight into improving FinFET design and channel material selection for a variety of semiconductor applications.