Enhancing FinFET Performance: A Comparative Study of Channel Materials and Short Channel Effects

Abstract

This work investigates how Short Channel Effects (SCEs) in nanoscale Double Gate FinFETs are affected by varying channel material dielectric constants. Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN), and Silicon (Si) are the channel materials that we investigate. Using the PADRE Simulator, we examine significant metrics such as Drain-Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), Threshold Voltage (Vth) Roll-off, on-current, and transconductance. The results show that GaN-FinFETs excel in subthreshold swing at lower dielectric constants and transconductance at higher dielectric constants, whereas GaSb-FinFETs exhibit excellent DIBL properties at lower dielectric constants. GaAs-FinFETs perform better than other FinFETs in terms of threshold voltage and on-current at higher dielectric constants. The findings provide valuable guidance on selecting channel materials to get the best FinFET performance. This knowledge can help designers make informed decisions creating leading-edge semiconductor devices