Performance Analysis of Nanoscale Double Gate Ge and GaSb finFETs

Abstract

This paper explores the performance characteristics of Germanium (Ge) and Gallium Antimonide (GaSb) as potential channel materials for finFET devices. The analysis focuses on key factors such as transconductance, on-current and short channel effects (SCEs) using simulations conducted in the Padre Simulator environment. The results reveal that GaSb-finFET exhibits superior transconductance and on-current as well as reduced short channel effects; drain induced barrier lowering (DIBL) and threshold voltage roll-off compared to Ge-finFET. However, Ge-finFET exhibits better characteristics in terms of subthreshold swing (SS). These findings are particularly important in application where faster switching capabilities are required.