Investigation of the Thermal Effect in Nano Silicon on Insulator (SOI) MOSFET

Abstract

This paper studied and investigates the thermal effect on the
electronics and transport properties of Silicon on Insulator Metal
Oxide Semiconductor Field Effect Transistor (SOI MOSFET).
Numerical simulations of the electronics characteristics (Average
electron velocity, electron density, sub-band energy) are analyzed
and presented. The simulation is to investigate the variation and
effect of temperature covering a range of low, average and high
temperatures (50K, 250K, 350K, 450K, 650K and 850K) on the
electronics properties of SOI MOSFET using the quasi-ballistic
electron transport model. The results obtained showed that the
average electron velocity of the first valley electron is at the peak
value of 8.20 × 105????/???? at 50K and the 2D electron density is
6.04 × 10
11????????−2 at 850K with sub-band energy of −1.86 ×
10−1
???????? resulting in high on-state current (????????????). The second valley
electron exhibit the same behaviour as the first valley electron with
a 2D electron density of 9.83 × 1011????????−2 at 850K. At average, low
and high temperature the third valley electron from the source to the
drain drift with an average electron velocity at the peak value of
9.20 × 105????/???? at and the 2D electron density is 6.03 × 1011????????−2
with sub-band energy of −1.21 × 10−1
???????? resulting in high on-state
current (????????????). This shows at a lower temperature the electron density
is very low and almost constant through the channel region because
of the high electron velocity. At an average temperature, the
average electron velocity is relatively constant and the barrier
potential is high as such the electron density is relatively constant
with increase in the channel length which is more appropriate for
designing other analogue or digital system using the SOI MOSFET.
The average electron velocity at high is relatively constant as the
channel length increases with increases in the gate voltage.