Effect of Temperature on the Quasi Ballistic Transport of a Double Gate NanoMOSFET

Abstract

This work analyzes the variation and effect of temperature on the
electron transport in a Double Gate Nano-MOSFET (DG MOSFET)
using quasi ballistic transport (semi-classical) model. NanoMOS
version 4.0.4 is used to simulate and investigate the variation and the
effect of temperature covering a range of 50k, 450k, and 850k and its
influence on the channel dimension from 0nm to 50nm to obtained
electronics properties such as the Average electron velocity, 2D
electron density and the Sub-band energy along the channel. The study
focuses on the elemental semiconductors (???????? ???????????? ????????) Channel and
compound semiconductors (???????????????? ???????????? ????????????????) channel under high
drain bias than under low drain bias. The result obtained showed that
at low temperature for the ????????, ????????, ???????????????? ???????????? ???????????????? channels, the 2D
electron density was found to be 5.76 × 1011????????−2 with an average
electron velocity at a peak value of 6.09 × 105 ????/???? and the Sub-band
energy profile along the channels is −4.98 × 10−1
???????? resulting in
high on-state current (????????????). At an average temperature for the
????????, ????????, ???????????????? ???????????? ???????????????? channels the 2D electron density was found to
be 1.75 × 1012????????−2 with average electron velocity at a peak value
of 5.76 × 105 ????/???? and the Sub-band energy profile along the channel
is −3.65 × 10−1
????????, while at 850k the 2D electron density was found
to be 3.38 × 1012????????−2 with average electron velocity at a peak value
of 5.23 × 105 ????/???? and the Sub-band energy profile along the channel
is −1.87 × 10−1
???????? for the ????????, ????????,???????????????? ???????????? ???????????????? channels. The
result shows that the average temperature range from 300k to 450k is
more appropriate and suitable for digital system design using DG
MOSFET.